In this study an efficient reduced-order model for a MEMS device is developed and investigations of the nonlinear static and the dynamic behavior are performed. The device is constituted of an imperfect microbeam under an axial load and an electric excitation. The imperfections, typically due to microfabrication processes, are simulated assuming a shallow arched initial shape. The axial load is deliberately added with an elevated value. The structure has a bistable static configuration of double potential well with possibility of escape. We derive a single-mode reduced-order model via the Ritz technique and the Padé approximation. This model, while simple, is able to combine both a sufficient accuracy, which enables to detect the main qualitative features of the device response up to elevated values of electrodynamic excitation, and a remarkable computational efficiency, which is essential for systematic global nonlinear dynamic simulations. We illustrate the nonlinear phenomena arising in the device, such as the coexistence of various competing in-well and cross-well attractors, which leads to a considerable versatility of behavior. We discuss their physical meaning and their practical relevance for the engineering design of the microstructure, since this is an uncommon and very attractive aspect in applications.
An Efficient Reduced-Order Model to Investigate the Behavior of an Imperfect Microbeam Under Axial Load and Electric Excitation
RUZZICONI, LAURA
;
2013-01-01
Abstract
In this study an efficient reduced-order model for a MEMS device is developed and investigations of the nonlinear static and the dynamic behavior are performed. The device is constituted of an imperfect microbeam under an axial load and an electric excitation. The imperfections, typically due to microfabrication processes, are simulated assuming a shallow arched initial shape. The axial load is deliberately added with an elevated value. The structure has a bistable static configuration of double potential well with possibility of escape. We derive a single-mode reduced-order model via the Ritz technique and the Padé approximation. This model, while simple, is able to combine both a sufficient accuracy, which enables to detect the main qualitative features of the device response up to elevated values of electrodynamic excitation, and a remarkable computational efficiency, which is essential for systematic global nonlinear dynamic simulations. We illustrate the nonlinear phenomena arising in the device, such as the coexistence of various competing in-well and cross-well attractors, which leads to a considerable versatility of behavior. We discuss their physical meaning and their practical relevance for the engineering design of the microstructure, since this is an uncommon and very attractive aspect in applications.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.